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HIGH-PERFORMANCE EMBEDDED MEMORY

Embedded memory plays a crucial role in today’s VLSI applications from high-performance computing to low-power consumer electronics. While scaling of technology feature size down to 32nm or 28nm has enabled ever- larger and higher-performance on-die memories. However, scaling has also created growing challenges for the embedded memory designer. Growing device variability and power limitations are driving innovative solutions to maintain robustness and area-efficiency in such aggressively scaled memories. In particular, peripheral-circuit-assist features have become the key to maintaining cell read and write margins to enable low-voltage operation for dense SRAM caches. New strategies ranging from circuit-level techniques to fundamental changes in array architecture can also enable significant gains in area and power efficiency.

Read/write bandwidth of nonvolatile memories 10000

Write Bandwidth [MB/s]

1000

100

10

FeRAM (ISSCC 09)

Embedded MRAM

A S S C C 0 7 ) M R A M A S S C C 0 6 )

FeRAM, MRAM (ISSCC 06)

4Mb RRAM

(ISSCC 11)

NAND (ISSCC’08)

PRAM (ISSCC 07, 10)

1Gb PRAM (ISSCC’11)

1

N O R ( I S S C C 0 7 , 0 5 )

Embedded NOR (ISSCC’07)

100

1000 Read Bandwidth [MB/s]

10000

Figure 5. NVRAM Read/Write Bandwidth Trends

©Copyright 2011 ISSCC

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