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ISSCC 2011 TRENDS REPORT - page 9 / 16

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Mapping physical memory species

Non-volatile

Mas -ROM Fuse, OTP

NV-RAM

MRAM

Flash

EEPROM

FeRAM

ROM (NV) Write=1-106

PCRAM ReRAM

Volatile

RAM

DRAM SRAM

W r i t e > 1 0 1 6

Write Endurance

Figure 6. Comparison of NVRAM Technologies

NAND FLASH MEMORY

Significant developments in NAND flash memory over the past few years are resulting in high- density, low-power, and low-cost storage solutions that are enabling the replacement of traditional hard-disk storage with solid-state disks (SSDs). At ISSCC 2011, a 64Gb/die capacity will be demonstrated using 24nm technology with 2b/cell operation. With physical scaling down accompanied by advancing multi-level-storage-cell concepts, a 64Gb/die capacity has been demonstrated in 24nm technology with 2 bits/cell operation. Figure 7 shows the observed trend in NAND flash capacities presented at ISSCC over the past 17 years. Unfortunately, as process feature size shrinks, error rates continue to rise, requiring system designers to develop more- sophisticated controllers to offset this issue, some of which are utilized outside the NAND silicon in the system memory controller.

©Copyright 2011 ISSCC

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