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BJT in Active Region (3)

,

  • For example, for the CE connection, iB can be simply

calculated as,

iB =

VBB VBE R BB

or by drawing load line on the base –emitter side

9

Deriving BJT Operating points in Active Region –An Example

In the CE Transistor circuit shown earlier VBB= 5V, RBB= 107.5 k Ω , R C C = 1 k Ω , V C C = 1 0 V . F i n d I B , I C , V C E , β a n d t h e t r a n s i s t power dissipation using the characteristics as shown below o r

By Applying KVL to the base emitter circuit

iB 100 μA

VBB VBE IB = R BB

0

5V vBE

By using this equation along with the iB / vBE characteristics of the base emitter junction, IB = 40 μA 10

5

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