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BJT in Saturation Region

  • Under this condition iC / iB < β in active region

  • Both base emitter as well as base collector junctions are forward

biased

  • VCE 0.2 V

  • Under this condition the BJT can be treated as an on switch

13

BJT in Saturation Region (2)

  • A BJT can enter saturation in the following ways (refer to

the CE circuit)

  • For a particular value of iB, if we keep on increasing RCC

  • For a particular value of RCC, if we keep on increasing iB

  • For a particular value of iB, if we replace the transistor

with one with higher β

14

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