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d.

Thin-field transistor

ANS:COBJ:Differentiate between direct and indirect image capture.

TOP:CMOS

11.A highly efficient indirect conversion system that takes up less fill space than CCDs is known as a ______.

a.

Charge-coupled device

b.

Field-effect transistor

c.

CMOS

d.

Thin-field transistor

ANS:COBJ:Differentiate between direct and indirect image capture.

TOP:CMOS

12.The indirect conversion detector system that requires optical coupling and image size reduction is known as a ______.

a.

Charge-coupled device

b.

Field-effect transistor

c.

CMOS

d.

Thin-field transistor

ANS:AOBJ:Differentiate between direct and indirect image capture.

TOP:CCD - Charge-coupled device

13.Which of the following flat-panel detector technologies was developed by NASA?

a.

Charge-coupled device

b.

Field-effect transistor

c.

CMOS

d.

Thin-field transistor

ANS:COBJ:Differentiate between direct and indirect image capture.

TOP:CMOS

14.When specialized pixels in a complementary metal oxide silicon system are struck with x-ray photons, ______.

a.

The x-ray photons are converted into light

b.

Light photons are stored in capacitors

c.

Light photons are converted into electrical charges

d.

All of the above

ANS:DOBJ:List the steps for x-ray–to–digital conversion.

TOP:CMOS

15.Detective quantum efficiency is a measurement of the ______.

a.

Total number of x-rays that is absorbed

b.

Percentage of light that is absorbed

c.

Percentage of x-rays absorbed

d.

Total amount of light that is absorbed

ANS:C

OBJ:Compare detector detective quantum efficiency to cassette-based systems.

Copyright © 2008 by Mosby, Inc. an affiliate of Elsevier Inc.

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