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Thomas S. Roche, Ph.D. Motorola Corporation  1999 Arizona Board of Regents for The University of ... - page 12 / 47

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Roche

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NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing

Polysilicon Etch

Solutions of nitric acid and HF

The higher the nitric:HF ratio, the slower and more selective the etch

Typical use - 300:1 ratio for removal of poly on product wafers and 5:1 ratio for removal of poly on dummy wafers

With the more dilute and selective etches, it is important that no oxide be present on top of the poly since that will inhibit the etch of the polysilicon.

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