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Thomas S. Roche, Ph.D. Motorola Corporation  1999 Arizona Board of Regents for The University of ... - page 7 / 47

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Roche

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NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing

Non-Damaging

Reactive ion etching and plasma etching can damage silicon surfaces.

These techniques also have some etching effect on the silicon surface.  

HF solutions show better selectivity of oxide to silicon than plasma.

An HF solution has fewer chemical species than a fluorine based plasma.  It is a better controlled reactant than a plasma.

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