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FEE2006 Perugia May 2006

Philippe Farthouat, CERN

Detector R&D for R< 20 cm 3D sensor development

Fast charge collection

Lower Vdepl

But higher capacity

Radhardness considerably better than standard silicon

Until now fabricated on a small scale in house (Stanford)

Yield now 80%

Arrangements for commercial production at SINTEF (still in early state)

0

20

40

60

80

100

0

5 10

15

1 10

16

1.5 10

16

2 10

16

Fluence [n/cm

2

]

0

8 10

15

1.6 10

16

2.4 10

16

3.2 10

16

Fluence p/cm

2

3D silicon C. DaVia et al. March 06

n-on-p strips P. Allport et al.

IEEE TNS 52 (2005) 1903

n-on-n pixels CMS T. Rohe et al.

NIMA 552(2005)232-238

3x1015 p/cm2

10 years LHC at

1034 cm-2s-1

At r=4cm

1.8x1016p/cm2

10 years SLHC at 1035cm-2s-1

At r=4cm

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