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FEE2006 Perugia May 2006

Philippe Farthouat, CERN

SiGe Option

Interest for the SiGe option

Main motivation being the possible power saving at the preamplifier stage

J. Kaplon et al., 2004 IEEE Rome Oct 2004, use 0.25 m CMOS

For CMOS: Input transistor: 300 A, other transistors  330 A (each 20 – 90 A)

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