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Patented M฀C Mode III provides three user-conigurable lock-in ampliiers, affording researchers virtually limitless application possibilities and unprecedented speed. It also provides two expansion slots. M฀C Mode III has been designed to allow single-pass imaging concurrent with KFM/EFM. Simultaneous, high-accuracy topography and surface potential measurements are enabled by a servo-on-height cantilever approach that is not susceptible to scanner drift. KFM/EFM is especially useful for measuring dielectric ilms, metal surfaces, piezoelectrics, and conductor-insulator transitions.

M฀C Mode III also lets researchers perform vertical or lateral modulation studies and delivers a unique plot of the oscillating amplitude vs. frequency in contact. This capability allows easy optimization of the detection sensitivity for a broad range of cantilever spring constants.

In addition to KFM/EFM and piezo force, M฀C Mode III allows the use of higher resonance modes of the cantilever. Higher harmonic imaging provides contrast different from that seen with fundamental amplitude and phase signals. This technique can be utilized to collect additional information about mechanical properties of the sample surface.

Temperature Control

฀gilent’s temperature controller uses a patented thermal insulation and compensation design to deliver the industry’s most precise temperature control. It allows imaging during temperature changes and is fully compatible with all imaging modes, including those utilized in luid. The temperature controller’s

design isolates the sample plate from the rest of the 5500 system. ฀n insulated ceramic ixture protects the surrounding apparatus from the effects of heating or cooling, thus providing the most precise, stable temperature control available. Temperature control is offered with heating up to 250°C and cooling down to -30°C.

Figure 3. Topograph , surface potential and, dC/dZ and dC/dV images of F12H20 adsorbates on Si. The images were obtained in the AM-FM mode. Scan area 300nm. The contrast covers the height and potential changes in the 0–200nm and 0–1V ranges. The contrast of dC/dZ maps is in relative units. The images in the columns from top to bottom were obtained respectively at the probe-sample distances of 1nm, 7nm, 15nm, and 30nm.


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