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New Generation Silicon Solar Cells

5.2 Surface passivation

New Generation Silicon Solar Cells

1. Thermal oxidation:

Reduction of the density of states on the interface or surface

Oxygen streams over the hot wafer surface and reacts with silicon to SiO2

 This results in an amorphous layer

Temperature of the process ~ 1000°C

Thickness of the layer > 35nm efficiency decreases

Time goes on and the velocity of the growth of the oxidic layer decreases

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