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New Generation Silicon Solar Cells

5.2 Surface passivation

New Generation Silicon Solar Cells

2. Passivation with SiNx

Reduction of the density of states on the interface

Gases silane SiH4 and methane NH3 form a layer of Si3N4

Temperature of the process ~ 350°C

Passivation quality rises with silane amount

S ~ 20 cm/s – 240 cm/s depending on the refraction index

advantages:

lower production temperature

Nitride seems also to work better as an anti reflection layer for solar cells

    better passivation

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