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New Generation Silicon Solar Cells

5.2 Surface passivation

New Generation Silicon Solar Cells

3. Passivation with only silane

The quality of the passivation is enormous

Passivation layer on the emitter should be very thin (10nm)

high absorption prefer SiNx-Process on the emitter

The process temperature is ~225°C

The passivation seems independet of contaminations of the silicon surface brought in during the manufacturing process

An example is the HIT-Solar Cell from Sanyo

Layer of monocristalline silicon between amorphous silicon layers

Efficiency of ~ 18,5%

Passivierqualität als Funktion der a-Si:H-Schichtdicke

HIT solar cell

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