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New Generation Silicon Solar Cells

5.2 Surface passivation

New Generation Silicon Solar Cells

Intrinsic gettering:

Contaminations will be collected at one area in the crystall and afterwards will be removed

Extrinsic gettering:

Contaminations will be transported to the crystall surface and afterwards be removed

e.g. aluminium

Foreign atom will be freed out of their bonds diffuse into the Al-Si alloy

30 minutes at T = 800°C to eliminate most of the contaminations, depends on the diffusion length of the atom

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