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New Generation Silicon Solar Cells

5.4 Laser operations

New Generation Silicon Solar Cells

p-doped layer is coated with an outer layer of n-doped silicon to form a large pn-junction

n-doped layer coats the entire wafer recombination pathways between front and rear surfaces

Edge isolation:

groove is continuously scribed completely

through the n-type layer right next to the

edge of the cell

Requirements:

Rp should be kept high; FF > 76%

Little waste of solar cell area

1000 wafer/h

Flexibility (thin wafers)

Groove to isolate the front and rear side of the cells

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